+65 6788-9233

Part of the TTI Family of Specialists Contact Mouser (Singapore) +65 6788-9233 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STW68N65DM6-4AG

Name: STMicroelectronics STW68N65DM6-4AG
Brand: STMicroelectronics
SKU: 511-STW68N65DM6-4AG
Price: 228596.85 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STW68N65DM6-4AG

Mfr. No:

STW68N65DM6-4AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in

Complete Your Design

Datasheet:

STW68N65DM6-4AG Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STW68N65DM6-4AG

In Stock: 7

Stock:: 7 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 7 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-,--

Ext. Price:

Rp-,--

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp228.596,85	Rp228.596,85
	Rp140.486,34	Rp1.404.863,40
	Rp127.874,10	Rp12.787.410,00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	72 A
Rds On - Drain-Source Resistance:	39 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4.75 V
Qg - Gate Charge:	118 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	480 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	MOSFETs
Factory Pack Quantity:	600
Subcategory:	Transistors
Unit Weight:	6,080 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STW68N65DM6-4AG Datasheet (PDF)

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

MDmesh DM6 N-channel Power MOSFETs

STMicroelectronics MDmesh DM6 N-channel Power MOSFETs are part of the MDmesh™ DM6 fast-recovery diodes. These automotive-grade N-channel power MOSFETs offer very low recovery charge (Q_rr) and recovery time (t_rr), combined with low R_DS(on). The DM6 power MOSFETs feature low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. These power MOSFETs are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.