TSG65N190CR RVG

Name: Taiwan Semiconductor TSG65N190CR RVG
Brand: Taiwan Semiconductor
SKU: 821-TSG65N190CRRVG
Price: 171842 IDR
Availability: InStock

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Mouser No:

821-TSG65N190CRRVG

Mfr. No:

TSG65N190CR RVG

Mfr.:

Taiwan Semiconductor

Description:

GaN FETs 650V, 11A, PDFN56, E-mode GaN Transistor

Datasheet:

TSG65N190CR RVG Datasheet

ECAD Model:

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In Stock: 2.993

Stock:: 2.993 Can Dispatch Immediately

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Factory Lead Time:: 30 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 2993 will be subject to minimum order requirements.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp171.842	Rp171.842
	Rp118.415	Rp1.184.150
	Rp88.111	Rp8.811.100
	Rp78.827	Rp39.413.500
Full Reel (Order in multiples of 3000)
	Rp78.827	Rp236.481.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Taiwan Semiconductor
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PDFN-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	11 A
Rds On - Drain-Source Resistance:	190 mOhms
Vgs - Gate-Source Voltage:	- 7 V, + 7 V
Vgs th - Gate-Source Threshold Voltage:	2.6 V
Qg - Gate Charge:	2.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Brand:	Taiwan Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	10 ns
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	GaN FETs
Rise Time:	5 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	Si
Typical Turn-Off Delay Time:	8 ns
Typical Turn-On Delay Time:	5 ns
Part # Aliases:	TSG65N190CR

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Datasheet

TSG65N190CR RVG Datasheet

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TARIC:: 8541290000
ECCN:: EAR99

TSG65N190CR RVG

Mfr.: Taiwan Semiconductor

Description: GaN FETs 650V, 11A, PDFN56, E-mode GaN Transistor

In Stock: 2.993

Pricing (IDR)

Specifications

Documents (4)

Datasheet

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Mfr.:

Taiwan Semiconductor

Description:

GaN FETs 650V, 11A, PDFN56, E-mode GaN Transistor

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TAIWAN SEMICONDUCTOR