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CSD13303W1015

Name: Texas Instruments CSD13303W1015
Brand: Texas Instruments
SKU: 595-CSD13303W1015
Price: 12787.41 IDR
Availability: InStock

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Mouser No:

595-CSD13303W1015

Mfr. No:

CSD13303W1015

Mfr.:

Texas Instruments

Description:

MOSFETs N-CH NexFET Pwr MOSF ET

Datasheet:

CSD13303W1015 Datasheet

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More Information

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In Stock: 1.987

Stock:: 1.987 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000,00)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp12.787,41	Rp12.787,41
	Rp7.830,10	Rp78.301,00
	Rp5.132,48	Rp513.248,00
	Rp3.906,29	Rp1.953.145,00
	Rp3.468,37	Rp3.468.370,00
Full Reel (Order in multiples of 3000)
	Rp2.995,41	Rp8.986.230,00
	Rp2.750,17	Rp16.501.020,00
	Rp2.610,03	Rp23.490.270,00

† A MouseReel™ fee of Rp98.000,00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DSBGA-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	3.5 A
Rds On - Drain-Source Resistance:	20 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	850 mV
Qg - Gate Charge:	3.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.65 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	3.2 ns
Forward Transconductance - Min:	14 S
Product Type:	MOSFETs
Rise Time:	10 ns
Series:	CSD13303W1015
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	14.7 ns
Typical Turn-On Delay Time:	4.6 ns
Unit Weight:	1,700 mg

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Datasheet

CSD13303W1015 Datasheet

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.