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CSD16340Q3

Name: Texas Instruments CSD16340Q3
Brand: Texas Instruments
SKU: 595-CSD16340Q3
Price: 29428.56 IDR
Availability: InStock

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Mouser No:

595-CSD16340Q3

Mfr. No:

CSD16340Q3

Mfr.:

Texas Instruments

Description:

MOSFETs N Channel NexFET Pow er MOSFET A 595-CSD A 595-CSD16340Q3T

Datasheet:

CSD16340Q3 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD16340Q3

In Stock: 2.451

Stock:: 2.451 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000,00)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp29.428,56	Rp29.428,56
	Rp18.743,19	Rp187.431,90
	Rp12.454,59	Rp1.245.459,00
	Rp9.827,04	Rp4.913.520,00
	Rp8.968,70	Rp8.968.700,00
Full Reel (Order in multiples of 2500)
	Rp8.968,70	Rp22.421.750,00

† A MouseReel™ fee of Rp98.000,00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSON-CLIP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	4.5 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	600 mV
Qg - Gate Charge:	6.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	PH
Country of Diffusion:	TW
Country of Origin:	TW
Fall Time:	5.2 ns
Product Type:	MOSFETs
Rise Time:	16.1 ns
Series:	CSD16340Q3
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	13.8 ns
Typical Turn-On Delay Time:	4.8 ns
Unit Weight:	44,400 mg

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Power Management Guide 2018 (Rev. R)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8542390090
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8542399000
MXHTS:: 8542399999
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

CSD16340Q3 NexFET™ Power MOSFET

The Texas Instruments CSD16340Q3 NexFET™ Power MOSFET is designed to minimize losses in power conversion and is optimized for 5V gate drive applications. The TI CSD16340Q3 NexFET Power MOSFET is resistance rated at Vgs = 2.5V and also features ultra low Qg and Qgd. The TI CSD16340Q3 NexFET offers low thermal resistance and is also ideal for control or synchronous FET applications.

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.