It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

CSD17483F4

Name: Texas Instruments CSD17483F4
Brand: Texas Instruments
SKU: 595-CSD17483F4
Price: 6656 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

595-CSD17483F4

Mfr. No:

CSD17483F4

Mfr.:

Texas Instruments

Description:

MOSFETs 30V N-CH Pwr MOSFET A 595-CSD17483F4T A A 595-CSD17483F4T

Datasheet:

CSD17483F4 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 15.529

Stock:: 15.529 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1 Maximum: 1190

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp6.656	Rp6.656
	Rp4.134	Rp41.340
	Rp2.610	Rp261.000
	Rp1.944	Rp972.000
	Rp1.717	Rp1.717.000
Full Reel (Order in multiples of 3000)
	Rp1.717	Rp5.151.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD17483F4T

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

Rp24.349

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD17483F4T

Description:

MOSFETs 30V N-Ch FemtoFET MO SFET A 595-CSD17483 A 595-CSD17483F4

Compare With Current Part

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PICOSTAR-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	1.5 A
Rds On - Drain-Source Resistance:	240 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	650 mV
Qg - Gate Charge:	1.01 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Tradename:	FemtoFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	PH
Country of Diffusion:	CN
Country of Origin:	PH
Fall Time:	3.4 ns
Forward Transconductance - Min:	2.4 S
Product Type:	MOSFETs
Rise Time:	1.3 ns
Series:	CSD17483F4
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	10.6 ns
Typical Turn-On Delay Time:	3.3 ns
Unit Weight:	0,400 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

CSD17483F4 Datasheet

Images

Function Diagram

PCN

SPICE Models

This functionality requires JavaScript to be enabled.

CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

CSD17483F4 FemtoFET MOSFET

Texas Instruments CSD17483F4 FemtoFET MOSFET is built using FemtoFET technology and is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.