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CSD17507Q5A

Name: Texas Instruments CSD17507Q5A
Brand: Texas Instruments
SKU: 595-CSD17507Q5A
Price: 22772 IDR
Availability: InStock

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Mouser No:

595-CSD17507Q5A

Mfr. No:

CSD17507Q5A

Mfr.:

Texas Instruments

Description:

MOSFETs 30V NChannel Hi Side NexFET Pwr MOSFET A A 595-CSD17579Q5A

Datasheet:

CSD17507Q5A Datasheet

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Learn more about Texas Instruments CSD17507Q5A

In Stock: 3.696

Stock:: 3.696 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp22.772	Rp22.772
	Rp14.206	Rp142.060
	Rp9.407	Rp940.700
	Rp7.392	Rp3.696.000
	Rp6.674	Rp6.674.000
Full Reel (Order in multiples of 2500)
	Rp5.973	Rp14.932.500
	Rp5.816	Rp29.080.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD17579Q5A

Description:

MOSFETs 30-V N channel NexF ET power MOSFET sin A 595-CSD17579Q5AT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSONP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	16.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Qg - Gate Charge:	2.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	TW
Country of Origin:	CN
Forward Transconductance - Min:	16 S
Product Type:	MOSFETs
Series:	CSD17507Q5A
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	83,700 mg

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8542399000
MXHTS:: 85423999
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

CSD17507Q5A 30V N-Channel NexFET™ Power MOSFET

Texas Instruments CSD17507Q5A 30V N-Channel NexFET™ Power MOSFET has been designed to minimize losses in power conversion applications. The device features ultra-low Q_g and Q_gd, low-thermal resistance, and they are avalanche rated. The Texas Instruments CSD17507Q5A is ideal for Point-of-Load synchronous buck in networking, telecom, and computing systems and is optimized for control FET applications.

CSD17507Q5A NexFET™ Power MOSFETs

Texas Instruments CSD17507Q5A N-channel NexFET™ power MOSFETs are 30V devices deisgned to minimize losses in power conversion applications. TI CSD17507Q5A NexFET power MOSFETs feature low thermal resistance as well as ultralow gate charge totla (Qg) and gate charge gate to drain (Qgd). The TI CSD17507Q5A has a 1.6V threshold voltage. These TI NexFET power MOSFETs are optimized for control FET applications and are also ideal for point-of-load synchronous buck in networking, telecom, and computing systems.