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CSD18511KTTT

Name: Texas Instruments CSD18511KTTT
Brand: Texas Instruments
SKU: 595-CSD18511KTTT
Price: 51150 IDR
Availability: OutOfStock

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Mouser No:

595-CSD18511KTTT

Mfr. No:

CSD18511KTTT

Mfr.:

Texas Instruments

Description:

MOSFETs 40-V N channel NexF ET power MOSFET si A A 595-CSD18511KTT

Datasheet:

CSD18511KTTT Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD18511KTTT

Availability

Stock:: 0

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Factory Lead Time:: 12 Weeks Estimated factory production time.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 50)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp51.150	Rp51.150
	Rp25.400	Rp254.000
Full Reel (Order in multiples of 50)
	Rp25.400	Rp1.270.000
	Rp19.094	Rp1.909.400
	Rp18.393	Rp9.196.500
	Rp17.692	Rp17.692.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD18511KTT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

Rp42.216

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD18511KTT

Description:

MOSFETs 40-V N channel NexF ET power MOSFET si A A 595-CSD18511KTTT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	194 A
Rds On - Drain-Source Resistance:	3.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	64 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	188 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	3 ns
Forward Transconductance - Min:	249 S
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	CSD18511KTT
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	17 ns
Typical Turn-On Delay Time:	8 ns
Unit Weight:	4 g

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.