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CSD18536KTTT

Name: Texas Instruments CSD18536KTTT
Brand: Texas Instruments
SKU: 595-CSD18536KTTT
Price: 121217.64 IDR
Availability: InStock

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Mouser No:

595-CSD18536KTTT

Mfr. No:

CSD18536KTTT

Mfr.:

Texas Instruments

Description:

MOSFETs 60-V N channel NexF ET power MOSFET si A A 595-CSD18536KTT

Datasheet:

CSD18536KTTT Datasheet

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Learn more about Texas Instruments CSD18536KTTT

In Stock: 421

Stock:: 421 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 50)

Cut Tape

MouseReel™ (+Rp98.000,00)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp121.217,64	Rp121.217,64
	Rp64.988,07	Rp649.880,70
Full Reel (Order in multiples of 50)
	Rp64.988,07	Rp3.249.403,50
	Rp56.755,08	Rp5.675.508,00

† A MouseReel™ fee of Rp98.000,00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD18536KTT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

Rp93.365,61

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Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD18536KTT

Description:

MOSFETs 60-V N channel NexF ET power MOSFET si A A 595-CSD18536KTTT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	200 A
Rds On - Drain-Source Resistance:	1.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Qg - Gate Charge:	140 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	CN
Country of Origin:	CN
Fall Time:	4 ns
Forward Transconductance - Min:	312 S
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	CSD18536KTT
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	11 ns
Unit Weight:	2 g

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.