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CSD19506KTT

Name: Texas Instruments CSD19506KTT
Brand: Texas Instruments
SKU: 595-CSD19506KTT
Price: 89161.53 IDR
Availability: InStock

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Mouser No:

595-CSD19506KTT

Mfr. No:

CSD19506KTT

Mfr.:

Texas Instruments

Description:

MOSFETs 80-V N channel NexF ET power MOSFET si A A 595-CSD19506KTTT

Datasheet:

CSD19506KTT Datasheet

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Learn more about Texas Instruments CSD19506KTT

In Stock: 1.768

Stock:: 1.768 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 500)

Cut Tape

MouseReel™ (+Rp98.000,00)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp89.161,53	Rp89.161,53
	Rp65.338,41	Rp653.384,10
	Rp51.675,15	Rp5.167.515,00
Full Reel (Order in multiples of 500)
	Rp43.091,82	Rp21.545.910,00
	Rp41.515,29	Rp41.515.290,00

† A MouseReel™ fee of Rp98.000,00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD19506KTTT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

Rp129.275,46

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD19506KTTT

Description:

MOSFETs 80-V N channel NexF ET power MOSFET si A A 595-CSD19506KTT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	150 A
Rds On - Drain-Source Resistance:	2.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	120 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	5 ns
Forward Transconductance - Min:	297 S
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	7 ns
Series:	CSD19506KTT
Factory Pack Quantity:	500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	14 ns
Unit Weight:	2 g

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

TI N-Channel 8-23-12

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.