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CSD19531Q5AT

Name: Texas Instruments CSD19531Q5AT
Brand: Texas Instruments
SKU: 595-CSD19531Q5AT
Price: 54828 IDR
Availability: InStock

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Mouser No:

595-CSD19531Q5AT

Mfr. No:

CSD19531Q5AT

Mfr.:

Texas Instruments

Description:

MOSFETs 100V 5.3mOhm NexFET Power MOSFET A 595-C A 595-CSD19531Q5A

Datasheet:

CSD19531Q5AT Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD19531Q5AT

In Stock: 1.328

Stock:: 1.328 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp54.828	Rp54.828
	Rp35.735	Rp357.350
	Rp21.896	Rp2.189.600
Full Reel (Order in multiples of 250)
	Rp21.896	Rp5.474.000
	Rp19.444	Rp9.722.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD19531Q5A

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

Rp40.815

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD19531Q5A

Description:

MOSFETs 100V 5.3mOhm Pwr MOS FET A 595-CSD19531Q A 595-CSD19531Q5AT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSONP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	6.4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Qg - Gate Charge:	37 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3.3 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	CN
Country of Origin:	CN
Fall Time:	5.2 ns
Forward Transconductance - Min:	82 S
Product Type:	MOSFETs
Rise Time:	5.8 ns
Series:	CSD19531Q5A
Factory Pack Quantity:	250
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	18.4 ns
Typical Turn-On Delay Time:	6 ns
Unit Weight:	87,800 mg

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Datasheet

CSD19531Q5AT Datasheet

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CSD19531Q5AT Symbol & Footprint by SnapMagic

SPICE Models

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.