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CSD22206WT

Name: Texas Instruments CSD22206WT
Brand: Texas Instruments
SKU: 595-CSD22206WT
Price: 33983 IDR
Availability: InStock

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Mouser No:

595-CSD22206WT

Mfr. No:

CSD22206WT

Mfr.:

Texas Instruments

Description:

MOSFETs -8V P channel NexFE T power MOSFET sin A A 595-CSD22206W

Datasheet:

CSD22206WT Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD22206WT

In Stock: 56

Stock:: 56 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp33.983	Rp33.983
	Rp21.721	Rp217.210
	Rp10.826	Rp1.082.600
Full Reel (Order in multiples of 250)
	Rp10.826	Rp2.706.500
	Rp10.072	Rp5.036.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD22206W

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

Rp18.743

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD22206W

Description:

MOSFETs -8V P channel NexFE T power MOSFET sin A A 595-CSD22206WT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DSBGA-9
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	8 V
Id - Continuous Drain Current:	2 A
Rds On - Drain-Source Resistance:	9.1 mOhms
Vgs - Gate-Source Voltage:	- 6 V, 6 V
Vgs th - Gate-Source Threshold Voltage:	700 mV
Qg - Gate Charge:	14.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.7 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	45 ns
Forward Transconductance - Min:	20 S
Product Type:	MOSFETs
Rise Time:	17 ns
Series:	CSD22206W
Factory Pack Quantity:	250
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	118 ns
Typical Turn-On Delay Time:	37 ns
Unit Weight:	200 mg

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Technical Resources

CSD22206W TINA-TI Reference Design

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

CSD22206W P-Channel NexFET Power MOSFETs

Texas Instruments CSD22206W P-Channel NexFET Power MOSFETs is a –8V, 4.7mΩ, 1.5mm×1.5mm device that is designed to deliver low on-resistance and gate charge in a small package. The device provides the smallest outline possible with excellent thermal characteristics. The low on-resistance coupled with the small footprint and low profile make the device ideal for battery-operated space-constrained applications.

NexFET P-Channel Power MOSFETs

Texas Instruments NexFET P-Channel Power MOSFETs are designed to deliver the lowest on-resistance and gate charge in a small outline with excellent thermal characteristics in an ultra-low profile. These Texas Instruments NexFET MOSFETs feature ultra-low on-resistance, ultra-low Q_g and Q_gd, and a small footprint of 1.0mm x 1.5mm.

TI P-Channel MOSFETs - 8-23-12

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.