CSD95379Q3MT

Texas Instruments
595-CSD95379Q3MT
CSD95379Q3MT

Mfr.:

Description:
Gate Drivers Synchronous Buck Nex FET Power Stage CSD A 595-CSD95379Q3M

Datasheet:
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Learn more about Texas Instruments CSD95379Q3MT

In Stock: 1.500

Stock:
1.500 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp58.156 Rp58.156
Rp38.362 Rp383.620
Rp35.384 Rp884.600
Rp30.830 Rp3.083.000
Full Reel (Order in multiples of 250)
Rp21.721 Rp5.430.250
Rp20.845 Rp10.422.500
Rp19.619 Rp19.619.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
CSD95379Q3M
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
Rp32.582
Min:
1

Similar Product

Texas Instruments CSD95379Q3M
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Gate Drivers Sync Buck NexFET Pow er State A 595-CSD9 A 595-CSD95379Q3MT
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
REACH - SVHC:
Driver ICs - Various
SMD/SMT
VSON-10
1 Driver
1 Output
20 A
4.5 V
5.5 V
- 40 C
+ 125 C
CSD95379Q3M
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Moisture Sensitive: Yes
Operating Supply Current: 5.5 mA
Pd - Power Dissipation: 6 W
Product Type: Gate Drivers
Factory Pack Quantity: 250
Subcategory: PMIC - Power Management ICs
Technology: Si
Tradename: NexFET
Unit Weight: 34,400 mg
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Attributes selected: 0

Datasheet

PCN

SPICE Models

Technical Resources

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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

NexFET Power Stage ICs

Texas Instruments NexFET Power Stage ICs are optimized driver ICs with Dual NexFET MOSFETs used in the device. This feature delivers higher efficiency in a typical high-current POL design. With ultra-low Qg and Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitors' devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a reduction in size by up to 1/2 for the output filter (caps and inductor). These devices come with a unique ground pad leadframe and pinout, simplifying the customer's layout and improving operating and thermal performance. The Texas Instruments NexFET Power Stage ICs are offered in smaller packages versus typical discrete solutions, which saves board space.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

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