JFE150DBVR

Texas Instruments
595-JFE150DBVR
JFE150DBVR

Mfr.:

Description:
JFETs Ultra-low-noise low -gate-current audio

Datasheet:
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In Stock: 2.202

Stock:
2.202 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp36.435 Rp36.435
Rp30.304 Rp3.030.400
Rp28.378 Rp14.189.000
Rp23.298 Rp23.298.000
Full Reel (Order in multiples of 3000)
Rp23.298 Rp69.894.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: JFETs
RoHS:  
Si
SMD/SMT
SOT-23-5
N-Channel
Single
40 V
- 40 V
- 1.2 V
50 mA
- 40 C
+ 125 C
JFE150
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Forward Transconductance - Min: 3 mS
Product Type: JFETs
Factory Pack Quantity: 3000
Subcategory: Transistors
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Attributes selected: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

JFE150 Audio N-Channel JFET

Texas Instruments JFE150 Audio N-Channel JFET is a Burr-Brown™ discrete JFET built using Texas Instruments’ modern, high-performance, analog bipolar process. The JFE150 features performance not previously available in older discrete JFET technologies. The JFE150 offers the maximum possible noise-to-power efficiency and flexibility, where the quiescent current can be set by the user and yields excellent noise performance for currents from 50µA to 20mA. When biased at 5mA, the device yields 0.8nV/√Hz of input-referred noise, giving ultra-low noise performance with extremely high input impedance (> 1TΩ). The JFE150 also features integrated diodes connected to separate clamp nodes to protect without the addition of high leakage, nonlinear external diodes.

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