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LMG3422R030RQZR

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Mouser No:

595-LMG3422R030RQZR

Mfr. No:

LMG3422R030RQZR

Mfr.:

Texas Instruments

Description:

Gate Drivers 600-V 30-m? GaN FET with integrated driv LMG3422R030RQZT

Datasheet:

LMG3422R030RQZR Datasheet

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Product:	Isolated Gate Drivers
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package/Case:	VQFN-54
Number of Drivers:	1 Driver
Number of Outputs:	3 Output
Output Current:	1.2 A
Supply Voltage - Min:	7.5 V
Supply Voltage - Max:	18 V
Configuration:	Non-Inverting
Rise Time:	4 ns
Fall Time:	21 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Series:	LMG3422R030
Packaging:	Reel
Brand:	Texas Instruments
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	Not Available
Development Kit:	LMG342X-BB-EVM
Input Voltage - Max:	18 V
Input Voltage - Min:	0 V
Logic Type:	CMOS
Maximum Turn-Off Delay Time:	65 ns
Maximum Turn-On Delay Time:	52 ns
Moisture Sensitive:	Yes
Product Type:	Gate Drivers
Rds On - Drain-Source Resistance:	30 mOhms
Shutdown:	Shutdown
Factory Pack Quantity:	2000
Subcategory:	PMIC - Power Management ICs
Technology:	GaN
Tradename:	GaN

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Datasheet

LMG3422R030RQZR Datasheet

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USHTS:: 8542390090
ECCN:: EAR99

LMG342xR030 GaN Field Effect Transistors (FETs)

Texas Instruments LMG342xR030 GaN Field Effect Transistors (FETs) come with an integrated driver and protection that enables designers to achieve new power density and efficiency levels in power electronics systems.