UCC23313QDWYRQ1

Texas Instruments
595-UCC23313QDWYRQ1
UCC23313QDWYRQ1

Mfr.:

Description:
Optically Isolated Gate Drivers Automotive 3.75kVrms 4A/5A single-chann UCC23313QDWYQ1

ECAD Model:
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In Stock: 2.083

Stock:
2.083 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 850)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
Rp39.588 Rp39.588
Rp29.429 Rp294.290
Rp26.801 Rp670.025
Rp23.998 Rp2.399.800
Rp22.597 Rp5.649.250
Full Reel (Order in multiples of 850)
Rp21.546 Rp18.314.100
Rp19.969 Rp33.947.300
Rp19.794 Rp84.124.500
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Optically Isolated Gate Drivers
RoHS:  
UCC23313
SMD/SMT
SOIC-6
- 40 C
+ 125 C
750 mW
105 ns
28 ns
25 ns
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Number of Drivers: 1 Driver
Number of Outputs: 1 Output
Output Current: 5 A
Product: Isolated Gate Drivers
Product Type: Optically Isolated Gate Drivers
Factory Pack Quantity: 850
Subcategory: PMIC - Power Management ICs
Supply Voltage - Max: 30 V
Supply Voltage - Min: 15 V
Technology: Si
Type: High-Side, Low-Side
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Attributes selected: 0

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CNHTS:
8542399000
USHTS:
8542390090
ECCN:
EAR99

UCC23313/UCC23313-Q1 Isolated Gate Drivers

Texas Instruments UCC23313/UCC23313-Q1 Isolated Gate Drivers are designed for IGBTs, MOSFETs, and SiC MOSFETs, with a 4.5A source, a 5.3A sink peak output current, and a 3.75kVRMS basic isolation rating. The UCC23313/UCC23313-Q1 has a high supply voltage range of 33V and allows the use of bipolar supplies to drive IGBTs and SiC power FETs effectively. The UCC23313/UCC23313-Q1 can drive low- and high-side power FETs.