UCC27211DR

Texas Instruments
595-UCC27211DR
UCC27211DR

Mfr.:

Description:
Gate Drivers 120V Boot 4A Peak Hi Freq Hi/Lo-Side Drv A 595-UCC27211D

ECAD Model:
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In Stock: 1.438

Stock:
1.438 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
Rp38.888 Rp38.888
Rp28.903 Rp289.030
Rp26.451 Rp661.275
Rp23.648 Rp2.364.800
Rp22.247 Rp5.561.750
Rp21.546 Rp10.773.000
Rp20.845 Rp20.845.000
Full Reel (Order in multiples of 2500)
Rp19.969 Rp49.922.500
Rp19.444 Rp97.220.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Tube
Availability:
In Stock
Price:
Rp55.354
Min:
1

Similar Product

Texas Instruments UCC27211D
Texas Instruments
Gate Drivers 120V Boot,4A Peak,Hi Freq Hi/Lo-Side Drvr
End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
SOIC-8
2 Driver
2 Output
4 A
8 V
17 V
7.2 ns
5.5 ns
- 40 C
+ 140 C
UCC27211
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Product Type: Gate Drivers
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: Si
Unit Weight: 76 mg
Products found:
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Attributes selected: 0

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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399999
ECCN:
EAR99

UCC2721x High Frequency Drivers

Texas Instruments UCC2721x High-Frequency High-Side and Low-Side Drivers are based on the popular UCC27200 and UCC27201 MOSFET drivers but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 4A source and 4A sink, and pull-up and pull-down resistance have been reduced to 0.9Ω. These performance enhancements allow for driving large power MOSFETs with minimized switching losses during the transition through the MOSFET's Miller Plateau.