UCC27444DGNR

Texas Instruments
595-UCC27444DGNR
UCC27444DGNR

Mfr.:

Description:
Gate Drivers 4-A dual-channel low -side gate driver w

Datasheet:
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Learn more about Texas Instruments UCC27444DGNR

In Stock: 2.322

Stock:
2.322 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 110
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp23.297,61 Rp23.297,61
Rp16.973,97 Rp169.739,70
Rp15.379,93 Rp384.498,25
Rp13.628,23 Rp1.362.823,00
Full Reel (Order in multiples of 2500)
Rp13.628,23 Rp34.070.575,00
† A MouseReel™ fee of Rp98.000,00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
High-Speed Gate Drivers
Low-Side
SMD/SMT
HVSSOP-8
2 Driver
2 Output
4 A
4.5 V
18 V
Non-Inverting
11 ns
7 ns
- 40 C
+ 125 C
UCC27444
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Logic Type: CMOS, TTL
Operating Supply Current: 39 mA
Output Voltage: 0 V to 18 V
Product Type: Gate Drivers
Propagation Delay - Max: 31 ns, 33 ns, 50 ns, 52 ns
Shutdown: No Shutdown
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: Si
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Attributes selected: 0

Datasheet

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CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

UCC27444/UCC27444-Q1 4A Low-Side Gate Driver

Texas Instrument UCC27444/UCC27444-Q1 4A Low-Side Gate Driver is a high-speed, dual-channel, low-side gate driver that effectively drives MOSFET and GaN power switches. UCC27444/UCC27444-Q1 has a typical peak drive strength of 4A, which reduces the rise and fall times of the power switches, increases efficiency, and lowers switching losses. The device’s fast propagation delay (18ns typical) yields better power stage efficiency by improving the pulse width utilization, deadtime optimization, control loop response, and transient performance of the system.

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