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T2G4005528-FS

Name: Qorvo T2G4005528-FS
Brand: Qorvo
SKU: 772-T2G4005528-FS
Price: 4560551 IDR
Availability: OutOfStock

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Mouser No:

772-T2G4005528-FS

Mfr. No:

T2G4005528-FS

Mfr.:

Qorvo

Description:

GaN FETs DC-3.5GHz 55 Watt 28V GaN Flangeless

Datasheet:

T2G4005528-FS Datasheet (PDF)

ECAD Model:

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More Information

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 20 Weeks Estimated factory production time.

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Minimum: 100 Multiples: 100

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp4.560.551	Rp456.055.100

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Package/Case:	NI-360
Transistor Polarity:	N-Channel
Brand:	Qorvo
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Gain:	16 dB
Maximum Operating Frequency:	3.5 GHz
Moisture Sensitive:	Yes
Output Power:	55 W
Packaging:	Tray
Product Type:	GaN FETs
Series:	T2G4005528
Factory Pack Quantity:	100
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT
Type:	GaN SiC HEMT
Part # Aliases:	T2G4005528 1099993

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Datasheet

T2G4005528-FS Datasheet (PDF)

PCN

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CNHTS:: 8542319000
CAHTS:: 8542330000
USHTS:: 8542390090
JPHTS:: 8542330996
KRHTS:: 8532331000
MXHTS:: 8542330201
ECCN:: EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.