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C3M0032120K

Name: Wolfspeed C3M0032120K
Brand: Wolfspeed
SKU: 941-C3M0032120K
Price: 232275.42 IDR
Availability: OutOfStock

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Mouser No:

941-C3M0032120K

Mfr. No:

C3M0032120K

Mfr.:

Wolfspeed

Description:

SiC MOSFETs 1.2kV 32mOHMS G3 SiC MOSFET

Datasheet:

C3M0032120K Datasheet

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp232.275,42	Rp232.275,42
	Rp137.333,28	Rp1.373.332,80
	Rp133.129,20	Rp15.975.504,00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Wolfspeed
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	63 A
Rds On - Drain-Source Resistance:	32 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 15 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	118 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	283 W
Channel Mode:	Enhancement
Brand:	Wolfspeed
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	9 ns
Forward Transconductance - Min:	27 S
Packaging:	Tube
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	18 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	25 ns
Unit Weight:	6 g

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Datasheet

C3M0032120K Datasheet

PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

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Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density.

C3M0032120K Silicon Carbide Power MOSFETs

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