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DIF120SIC022

Name: Diotec Semiconductor DIF120SIC022
Brand: Diotec Semiconductor
SKU: 637-DIF120SIC022
Price: 508869 IDR
Availability: InStock

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Mouser No:

637-DIF120SIC022

Mfr. No:

DIF120SIC022

Mfr.:

Diotec Semiconductor

Description:

SiC MOSFETs 1200V TO-247-4L, N, 120A, 1200V, 22.3m?, 175 Deg C

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

DIF120SIC022 Datasheet (PDF)

ECAD Model:

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Learn more about Diotec Semiconductor DIF120SIC022

In Stock: 438

Stock:: 438 Can Dispatch Immediately

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Factory Lead Time:: 9 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp508.869	Rp508.869
	Rp331.597	Rp3.315.970
	Rp327.568	Rp167.059.680

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diotec Semiconductor
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	22.3 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 18 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	269 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	340 W
Channel Mode:	Enhancement
Tradename:	DIF120SIC022
Brand:	Diotec Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	35 ns
Forward Transconductance - Min:	41.5 S
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	38 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	108 ns
Typical Turn-On Delay Time:	150 ns

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Datasheet

DIF120SIC022 Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TO-247-3L/4L Silicon Carbide (SiC) MOSFETs

Diotec Semiconductor TO-247-3L/4L Silicon Carbide (SiC) MOSFETs are ideally suited for high voltage and high frequency switching used in charging systems for electric vehicles (EV), solar inverters, or telecom power supplies. These MOSFETs feature a high 1200V and 650V reverse voltage, extremely low on-resistance, total Gate charge, low switching time, and low total switching energy. Advanced planar technology and the Silicon Carbide wafer material enable higher on-resistances at higher switching frequencies. These MOSFETs are used in DC-DC converters, DC drives, inverters, charging stations, Power Factor Correction (PFC), solar inverters, and power supplies.