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DIW120SIC023-AQ

Name: Diotec Semiconductor DIW120SIC023-AQ
Brand: Diotec Semiconductor
SKU: 637-DIW120SIC023-AQ
Price: 1513118.46 IDR
Availability: InStock

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Mouser No:

637-DIW120SIC023-AQ

Mfr. No:

DIW120SIC023-AQ

Mfr.:

Diotec Semiconductor

Description:

SiC MOSFETs

Datasheet:

DIW120SIC023-AQ Datasheet (PDF)

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In Stock: 707

Stock:: 707 Can Dispatch Immediately

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Factory Lead Time:: 10 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp1.513.118,46	Rp1.513.118,46
	Rp1.212.526,74	Rp12.125.267,40
	Rp1.134.225,75	Rp136.107.090,00
510	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diotec Semiconductor
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	125 A
Rds On - Drain-Source Resistance:	23 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 18 V
Vgs th - Gate-Source Threshold Voltage:	2.9 V
Qg - Gate Charge:	121 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	600 W
Channel Mode:	Enhancement
Brand:	Diotec Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Forward Transconductance - Min:	21 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Series:	120SIC
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC

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Datasheet

DIW120SIC023-AQ Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TO-247-3L/4L Silicon Carbide (SiC) MOSFETs

Diotec Semiconductor TO-247-3L/4L Silicon Carbide (SiC) MOSFETs are ideally suited for high voltage and high frequency switching used in charging systems for electric vehicles (EV), solar inverters, or telecom power supplies. These MOSFETs feature a high 1200V and 650V reverse voltage, extremely low on-resistance, total Gate charge, low switching time, and low total switching energy. Advanced planar technology and the Silicon Carbide wafer material enable higher on-resistances at higher switching frequencies. These MOSFETs are used in DC-DC converters, DC drives, inverters, charging stations, Power Factor Correction (PFC), solar inverters, and power supplies.