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DMWSH120H90SM4Q

Name: Diodes Incorporated DMWSH120H90SM4Q
Brand: Diodes Incorporated
SKU: 621-DMWSH120H90SM4Q
Price: 234377.46 IDR
Availability: InStock

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Mouser No:

621-DMWSH120H90SM4Q

Mfr. No:

DMWSH120H90SM4Q

Mfr.:

Diodes Incorporated

Description:

SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS

Datasheet:

DMWSH120H90SM4Q Datasheet (PDF)

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In Stock: 60

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Factory Lead Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp234.377,46	Rp234.377,46
	Rp142.588,38	Rp1.425.883,80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	97.5 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 15 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	51.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	235 W
Channel Mode:	Enhancement
Brand:	Diodes Incorporated
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	6.4 ns
Forward Transconductance - Min:	4.7 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	21.3 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	17.4 ns
Typical Turn-On Delay Time:	9.1 ns

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Datasheet

DMWSH120H90SM4Q Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

DMWSH120Hx 1200V N-Channel Power MOSFETs

Diodes Incorporated DMWSH120Hx 1200V N-Channel Power MOSFETs are silicon carbide MOSFETs designed to minimize the on-state resistance and maintain excellent switching performance. These MOSFETs feature low input capacitance, up to 100μA zero gate voltage drain current, up to ±250nA gate-source leakage, and a high BV_DSS rating for power applications. The DMWSH120Hx MOSFETs operate within the -55°C to 175°C temperature range and comply with the UL 94V-0 flammability classification rating. These power MOSFETs are ideal for EV high-power DC-DC converters, EV charging systems, solar inverters, AC-DC traction inverters, and automotive motor drivers.