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FFSP3065A

Name: onsemi FFSP3065A
Brand: onsemi
SKU: 512-FFSP3065A
Price: 158529 IDR
Availability: InStock

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Mouser No:

512-FFSP3065A

Mfr. No:

FFSP3065A

Mfr.:

onsemi

Description:

SiC Schottky Diodes 650V SiC SBD 30A

Datasheet:

FFSP3065A Datasheet (PDF)

ECAD Model:

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More Information

Learn more about onsemi FFSP3065A

In Stock: 107

Stock:: 107 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp158.529	Rp158.529
	Rp117.889	Rp1.178.890
	Rp98.095	Rp9.809.500
	Rp87.410	Rp43.705.000
	Rp81.804	Rp81.804.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-220-2
Configuration:	Single
If - Forward Current:	30 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	150 A
Ir - Reverse Current:	200 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FFSP3065A
Packaging:	Tube
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Pd - Power Dissipation:	240 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	50
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	650 V
Unit Weight:	2,160 g

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Datasheet

FFSP3065A Datasheet (PDF)

PCN

CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100101
ECCN:: EAR99

FFSP SiC Schottky Diodes

onsemi FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature-independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

Silicon Carbide Schottky Diodes

onsemi Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost. onsemi offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

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D1 EliteSiC Diodes

onsemi D1 EliteSiC Diodes is a high-performance and versatile solution designed for modern power electronics applications. The onsemi D1 features voltage ratings of 650V, 1200V, and 1700V. These diodes offer the flexibility to meet various design requirements. Featuring different packages, such as D2PAK2, D2PAK3, TO-220-2, TO-247-2, and TO-247-3, the D1 EliteSiC Diodes provide designers with options to optimize board space and thermal performance.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.