HAS350M12BM3

Wolfspeed
941-HAS350M12BM3
HAS350M12BM3

Mfr.:

Description:
Discrete Semiconductor Modules SiC, Module, 350A, 1200V, 62mm, BM3, Half-Bridge, Industrial, Harsh Environment

Datasheet:
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In Stock: 10

Stock:
10 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp10.750.883,58 Rp10.750.883,58

Product Attribute Attribute Value Select Attribute
Wolfspeed
Product Category: Discrete Semiconductor Modules
RoHS:  
Half Bridge Modules
Half Bridge
SiC
800 V
- 8 V, + 19 V
Screw Mount
Module
- 40 C
+ 150 C
Brand: Wolfspeed
Configuration: Half Bridge
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Id - Continuous Drain Current: 417 A
Pd - Power Dissipation: 1.293 kW
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 5.2 mOhms
Factory Pack Quantity: 1
Subcategory: Discrete and Power Modules
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 2.5 V
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Attributes selected: 0

Datasheet

PCN

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

HAS Harsh Environment SiC Half-Bridge Modules

Wolfspeed HAS Harsh Environment Silicon Carbide (SiC) Half-Bridge Modules provide the system benefits of SiC while maintaining the robust, industry-standard 62mm module package. The internal design, due to the low-inductance layout, enables high-speed SiC switching benefits and increased system efficiency. The Wolfspeed HAS modules are a perfect fit for high-frequency industrial applications such as induction heating, rail/traction, motor drives, and EV charging infrastructures.

62mm Silicon Carbide Half-Bridge Modules

Wolfspeed 1200V and 1700V 62mm Silicon Carbide (SiC) Half-Bridge Modules combine the system benefits of SiC with a robust and low-inductance layout. The half-bridge modules feature increased system efficiency due to SiC's low switching and conduction losses. These power modules include a low-inductance internal layout, enabling maximum voltage utilization with minimal overshoot and ringing. The half-bridge modules are chosen from aluminum nitride ceramic for reduced thermal resistance with robust CTE matching and silicon nitride ceramic for sustained maximum junction temperature operation.

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