It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IGB110S10S1XTMA1

Name: Infineon IGB110S10S1XTMA1
Brand: Infineon Technologies
SKU: 726-IGB110S10S1XTMA1
Price: 35209 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IGB110S10S1XTMA1

Mfr. No:

IGB110S10S1XTMA1

Mfr.:

Infineon Technologies

Description:

GaN FETs CoolGaN Transistor 100 V G3 in PQFN 3x3, 9.4 mohm

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IGB110S10S1XTMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IGB110S10S1XTMA1

In Stock: 2.875

Stock:: 2.875 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp35.209	Rp35.209
	Rp21.721	Rp217.210
	Rp15.783	Rp1.578.300
	Rp13.278	Rp6.639.000
	Rp12.560	Rp12.560.000
Full Reel (Order in multiples of 5000)
	Rp11.263	Rp56.315.000
	Rp10.826	Rp108.260.000

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	23 A
Rds On - Drain-Source Resistance:	11 mOhms
Vgs - Gate-Source Voltage:	6.5 V
Vgs th - Gate-Source Threshold Voltage:	2.9 V
Qg - Gate Charge:	3.4 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	15 W
Channel Mode:	Enhancement
Tradename:	CoolGaN
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Packaging:	Reel
Packaging:	Cut Tape
Product:	Transistors
Product Type:	GaN FETs
Series:	60 V - 120 V G3
Factory Pack Quantity:	5000
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	P-Channel
Type:	CoolGaN
Part # Aliases:	IGB110S10S1 SP005751575

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IGB110S10S1XTMA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

CoolGaN™ 100V G3 Transistors

Infineon Technologies CoolGaN™ 100V G3 Transistors are normally OFF, enhancement-mode (e-mode) power transistors in compact housing. These transistors feature low on-state resistance, making the devices an ideal choice for reliable performance in demanding high-current and high-voltage applications. The CoolGaN transistors are designed to improve thermal management. Typical applications include audio amplifier solutions, photovoltaic, telecommunication infrastructure, e‑Mobility, robotics, and drones.

CoolGaN™ G3 Transistors

Infineon Technologies CoolGaN™ G3 Transistors are designed to deliver superior performance in high-power density applications. These transistors feature a very low on-state resistance, enabling efficient power conversion and reduced energy losses. Available in four voltage options (60V, 80V, 100V, or 120V), the Infineon CoolGaN G3 Transistors deliver ultra-fast switching with an ultra-low gate/output charge. The transistors are housed in compact PQFN packages, which enhance thermal management and support dual-side cooling, ensuring reliable operation even under demanding conditions. These features make CoolGaN G3 Transistors a top choice for applications such as telecom, data center power supplies, and industrial power systems.