+65 6788-9233

Part of the TTI Family of Specialists Contact Mouser (Singapore) +65 6788-9233 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IGL65R055D2XUMA1

Name: Infineon IGL65R055D2XUMA1
Brand: Infineon Technologies
SKU: 726-IGL65R055D2XUMA1
Price: 117014 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IGL65R055D2XUMA1

Mfr. No:

IGL65R055D2XUMA1

Mfr.:

Infineon Technologies

Description:

GaN FETs CoolGaN Transistor 650 V G5

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IGL65R055D2XUMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IGL65R055D2XUMA1

In Stock: 2.084

Stock:: 2.084

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 3.000
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp117.014	Rp117.014
	Rp84.432	Rp844.320
	Rp62.010	Rp6.201.000
	Rp56.930	Rp28.465.000
Full Reel (Order in multiples of 3000)
	Rp46.245	Rp138.735.000

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Transistor Polarity:	HEMT
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	22 A
Rds On - Drain-Source Resistance:	70 mOhms
Vgs - Gate-Source Voltage:	- 10 V
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Qg - Gate Charge:	4.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	111 W
Channel Mode:	Enhancement
Tradename:	CoolGaN
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	MY
Country of Diffusion:	AT
Country of Origin:	AT
Fall Time:	14 ns
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Product:	GaN FETs
Product Type:	GaN FETs
Rise Time:	8 ns
Series:	CoolGaN G5
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	Si
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	12 ns
Typical Turn-On Delay Time:	9 ns
Part # Aliases:	IGL65R055D2 SP006065169

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IGL65R055D2XUMA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

CoolGaN™ 650V G5 Transistors

Infineon Technologies CoolGaN™ 650V G5 Transistors feature highly efficient gallium nitride (GaN) transistor technology for power conversion. The 650V G5 family addresses consumer, data center, industrial, and solar application challenges. The transistors offer improved system efficiency and power density with ultra-fast switching capability. The CoolGaN technology provides discrete and integrated solutions designed to enhance overall system performance. The Infineon Technologies CoolGaN 650V G5 Transistors enable high operating frequencies and reduce EMI ratings. The transistors are ideal for power distribution, switch-mode power supplies (SMPS), telecommunications, and other industrial applications.