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IKW40N120T2

Name: Infineon IKW40N120T2
Brand: Infineon Technologies
SKU: 726-IKW40N120T2
Price: 126998 IDR
Availability: InStock

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Mouser No:

726-IKW40N120T2

Mfr. No:

IKW40N120T2

Mfr.:

Infineon Technologies

Description:

IGBTs LOW LOSS DuoPack 1200V 40A

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

IKW40N120T2 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IKW40N120T2

In Stock: 1.199

Stock:: 1.199 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp126.998	Rp126.998
	Rp101.774	Rp1.017.740
	Rp82.330	Rp8.233.000
	Rp73.046	Rp35.062.080
	Rp64.638	Rp77.565.600

Alternative Packaging

Mfr. Part No.:

IKW40N120T2FKSA1

Packaging:

Tube

Availability:

In Stock

Price:

Rp133.830

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.75 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	75 A
Pd - Power Dissipation:	480 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	Trenchstop IGBT2
Packaging:	Tube
Brand:	Infineon Technologies
Country of Assembly:	CN
Country of Diffusion:	AT
Country of Origin:	AT
Gate-Emitter Leakage Current:	200 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	240
Subcategory:	IGBTs
Tradename:	TRENCHSTOP
Part # Aliases:	IKW4N12T2XK SP000244962 IKW40N120T2FKSA1
Unit Weight:	38 g

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Datasheet

IKW40N120T2 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

1200V Gen8 IGBTs

Infineon 1200V Gen8 IGBTs feature trench gate field stop technology delivered in industry standard TO-247 packages to provide best-in-class performance for industrial and energy-saving applications. The Gen8 technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. Infineon 1200V Gen8 IGBTs have current ratings from 8A up to 60A with typical VCE(ON) of 1.7V, and a short-circuit rating of 10µs to reduce power dissipation, resulting in increased power density and robustness. Using thin wafer technology, 1200V Gen8 IGBTs deliver improved thermal resistance and maximum junction temperature up to +175°C.