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IMBG65R072M1HXTMA1

Name: Infineon IMBG65R072M1HXTMA1
Brand: Infineon Technologies
SKU: 726-IMBG65R072M1HXTM
Price: 126298 IDR
Availability: InStock

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Mouser No:

726-IMBG65R072M1HXTM

Mfr. No:

IMBG65R072M1HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs SILICON CARBIDE MOSFET

Datasheet:

IMBG65R072M1HXTMA1 Datasheet (PDF)

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In Stock: 911

Stock:: 911 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 911 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp126.298	Rp126.298
	Rp79.878	Rp798.780
	Rp63.587	Rp6.358.700
	Rp61.660	Rp30.830.000
Full Reel (Order in multiples of 1000)
	Rp59.908	Rp59.908.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Similar Product

Mfr.:

Infineon Technologies

Mfr. No:

IMBG65R075M2HXTMA1

Description:

SiC MOSFETs SILICON CARBIDE MOSFET

Lifecycle:

New Product: New from this manufacturer.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	33 A
Rds On - Drain-Source Resistance:	94 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	5.7 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	140 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	MOSFETs
Product Type:	SiC MOSFETS
Series:	CoolSiC 650V
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Part # Aliases:	IMBG65R072M1H SP005539178

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Datasheet

IMBG65R072M1HXTMA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ MOSFETs 650V

Infineon Technologies CoolSiC™ MOSFETs 650V combines the physical strength of silicon carbide with features amplifying device performance, reliability, and ease of use. With its state-of-the-art trench semiconductor process, the CoolSiC™ MOSFET delivers the lowest losses in the application and the highest reliability in operation. CoolSiC is the perfect fit for use in high-temperature and harsh environment applications.

650V CoolSiC™ M1 Trench Power MOSFETs

Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC M1 MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high temperatures and harsh operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency.