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IPW95R130PFD7XKSA1

Name: Infineon IPW95R130PFD7XKSA1
Brand: Infineon Technologies
SKU: 726-IPW95R130PFD7XKS
Price: 92840 IDR
Availability: InStock

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Mouser No:

726-IPW95R130PFD7XKS

Mfr. No:

IPW95R130PFD7XKSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs HIGH POWER_NEW

Datasheet:

IPW95R130PFD7XKSA1 Datasheet (PDF)

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In Stock: 338

Stock:: 338 Can Dispatch Immediately

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Factory Lead Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp92.840	Rp92.840
	Rp59.207	Rp592.070
	Rp51.325	Rp5.132.500

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	950 V
Id - Continuous Drain Current:	36.5 A
Rds On - Drain-Source Resistance:	130 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	141 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	227 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	3.6 ns
Product Type:	MOSFETs
Rise Time:	14 ns
Series:	IPW95R130PFD7
Factory Pack Quantity:	240
Subcategory:	Transistors
Typical Turn-Off Delay Time:	118 ns
Typical Turn-On Delay Time:	25 ns
Part # Aliases:	IPW95R130PFD7 SP005547004

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Datasheet

IPW95R130PFD7XKSA1 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

950V CoolMOS™ PFD7 SJ MOSFETs

Infineon Technologies 950V CoolMOS™ PFD7 SJ MOSFETs offer super junction (SJ) technologies. The SJ technology is ideal for lighting and industrial SMPS applications by incorporating best-in-class performance with state-of-the-art ease of use. The PFDJ provides an integrated ultra-fast body diode allowing usage in resonant topologies with the lowest reverse recovery charge (Qrr).