IR25601STRPBF
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See Product Specifications
See Product Specifications
942-IR25601STRPBF
IR25601STRPBF
Mfr.:
Description:
Gate Drivers 2Ch 600V Half Bridge 60mA 10-20V 50ns
Gate Drivers 2Ch 600V Half Bridge 60mA 10-20V 50ns
Datasheet:
In Stock: 1.308
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Stock:
-
1.308 Can Dispatch ImmediatelyAn unexpected error occurred. Please try again later.
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Factory Lead Time:
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24 Weeks Estimated factory production time for quantities greater than shown.
Pricing (IDR)
| Qty. | Unit Price |
Ext. Price
|
|---|---|---|
| Cut Tape / MouseReel™ | ||
| Rp27.327 | Rp27.327 | |
| Rp19.969 | Rp199.690 | |
| Rp18.043 | Rp451.075 | |
| Rp15.993 | Rp1.599.300 | |
| Rp15.030 | Rp3.757.500 | |
| Rp14.469 | Rp7.234.500 | |
| Rp13.979 | Rp13.979.000 | |
| Full Reel (Order in multiples of 2500) | ||
| Rp13.436 | Rp33.590.000 | |
| Rp13.120 | Rp65.600.000 | |
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.
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Datasheet
Application Notes
- Gate Drive Characteristics and Requirements for HEXFET® power MOSFETs (PDF)
- Gate driver application matrix - Every switch needs a driver (PDF)
- HV Floating MOS Gate Drivers (PDF)
- Understanding HVIC Datasheet Specifications (PDF)
- Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs (PDF)
Product Catalogs
Technical Resources
- Design Tip - Using Monolithic High Voltage Gate Drivers (PDF)
- Design Tip - Using Monolithic High Voltage Gate Drivers (PDF)
- Low Gate Charge HEXFETS simplify Gate Drive and Lower Cost (PDF)
- Managing Transients in Control IC Driven Power Stages (PDF)
- PWM Control Methods Increases Efficiency and Reliability; Extends Battery Charge-cycle Time (PDF)
- Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTs (PDF)
- CNHTS:
- 8542399000
- CAHTS:
- 8542310000
- USHTS:
- 8542310075
- KRHTS:
- 8542311000
- TARIC:
- 8542319000
- MXHTS:
- 8542310302
- ECCN:
- EAR99
Indonesia
