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IS42S16320F-6TLI

Name: ISSI IS42S16320F-6TLI
Brand: ISSI
SKU: 870-42S16320F6TLI
Price: 277469.28 IDR
Availability: InStock

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Mouser No:

870-42S16320F6TLI

Mfr. No:

IS42S16320F-6TLI

Mfr.:

ISSI

Description:

DRAM 512M, 3.3V, SDRAM, 32Mx16, 166MHz, 54 pin Copper TSOP II (400 mil) RoHS, IT

Datasheet:

IS42S16320F-6TLI Datasheet (PDF)

ECAD Model:

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Learn more about ISSI IS42S16320F-6TLI

In Stock: 902

Stock:: 902 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1 Maximum: 265

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp277.469,28	Rp277.469,28
	Rp257.675,07	Rp2.576.750,70
	Rp249.792,42	Rp6.244.810,50
	Rp243.836,64	Rp12.191.832,00
	Rp237.880,86	Rp25.691.132,88

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	DRAM
RoHS:
Type:	SDRAM
Memory Size:	512 Mbit
Data Bus Width:	16 bit
Maximum Clock Frequency:	167 MHz
Package/Case:	TSOP-II-54
Organisation:	32 M x 16
Access Time:	6 ns
Supply Voltage - Min:	3 V
Supply Voltage - Max:	3.6 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	IS42S16320F
Brand:	ISSI
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	108
Subcategory:	Memory & Data Storage
Supply Current - Max:	120 mA
Unit Weight:	541 mg

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Datasheet

IS42S16320F-6TLI Datasheet (PDF)

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CNHTS:: 8542329010
CAHTS:: 8542320020
USHTS:: 8542320028
JPHTS:: 854232021
MXHTS:: 8542320299
ECCN:: EAR99

3.3V Single Data Rate (SDR) Synchronous DRAM

ISSI 3.3V Single Data Rate (SDR) Synchronous DRAM provides a wide selection of SDR SDRAM with densities from 16Mbit to 512Mbit in 1Mx16, 4Mx16, and 8Mx16 organizations. Each device features a single supply voltage (3.3V +/-0.3V), standard SDRAM clock timing, LVTTL compatible inputs, programmable burst length of 1, 2, 4, 8, or full page, auto-refresh and self-refresh modes. ISSI 3.3V SDR Synchronous DRAM has a programmable CAS latency of 2 or 3. Typical applications for these devices include wireless access points, base stations, routers, network storage, energy management, industrial controls, car infotainment, and automotive telematics.