IS46TR16128DL-125KBLA2

ISSI
870-46T16128DL15KBA2
IS46TR16128DL-125KBLA2

Mfr.:

Description:
DRAM Automotive (Tc: -40 to +105C), 2G, 1.35V, DDR3, 128Mx16, 1600MT/s @ 11-11-11, 96 ball BGA (9mm x13mm) RoHS

Datasheet:
ECAD Model:
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Learn more about ISSI IS46TR16128DL-125KBLA2

Availability

Stock:
Non-Stocked
Factory Lead Time:
32 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1   Maximum: 200
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp196.190,40 Rp196.190,40
Rp182.351,97 Rp1.823.519,70
Rp176.746,53 Rp4.418.663,25
Rp172.542,45 Rp8.627.122,50
Rp170.265,24 Rp17.026.524,00

Alternative Packaging

Mfr. Part No.:
IS46TR16128DL-125KBLA2-TR
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
Rp198.467,61
Min:
1

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: DRAM
RoHS:  
SDRAM - DDR3L
2 Gbit
16 bit
800 MHz
BGA-96
128 M x 16
20 ns
1.425 V
1.575 V
- 40 C
+ 105 C
IS46TR16128DL
Brand: ISSI
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 190
Subcategory: Memory & Data Storage
Supply Current - Max: 188 mA
Unit Weight: 4,065 g
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Attributes selected: 0

Datasheet

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CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR3 SDRAM

ISSI DDR3 SDRAM delivers high-speed data transfer rates up to 2133Mbps in a small BGA-96 or BGA-78 package. ISSI DDR3 SDRAM is available in a 64Mx16, 128Mx8, 128Mx16, 256Mx8, or  256Mx16 organization. Features include bidirectional differential data strobe, data masking per byte on Write commands, programmable burst length of 4 or 8, and programmable CAS latency. ISSI DDR3 SDRAMs are well-suited for telecom & networking, automotive, and industrial embedded computing.

IS43TRx 2GB DDR3 SDRAMs

ISSI IS43/46TRx DDR3 SDRAMs deliver high-speed SDRAM in a small BGA-96 or BGA-78 package. ISSI 2GBit DDR3 SDRAM features 128Mx16 or 256Mx8 organization and supply voltage at 1.35V with a maximum clock frequency of 666MHz or 800MHz. Features include bidirectional differential data strobe, data masking per byte on Write commands, programmable burst length of 4 or 8, with programmable CAS latency. Applications include telecom and networking, automotive, and industrial embedded computing.

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