IXSA60N65L2-7TR

IXYS
747-IXSA60N65L2-7TR
IXSA60N65L2-7TR

Mfr.:

Description:
SiC MOSFETs SiC MOSFET in TO263-7L

Lifecycle:
New Product:
New from this manufacturer.
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Product Attribute Attribute Value Select Attribute
IXYS
Product Category: SiC MOSFETs
Delivery Restrictions:
 Mouser does not presently sell this product in your region.
RoHS:  
SMD/SMT
TO-263-7
N-Channel
1 Channel
650 V
60 A
53 mOhms
- 5 V, 20 V
4.5 V
94.7 nC
- 55 C
+ 175 C
249 W
Enhancement
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 8.8 ns
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 15.6 ns
Series: IXSxNxL2Kx
Factory Pack Quantity: 800
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 18.5 ns
Typical Turn-On Delay Time: 7.6 ns
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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [RDS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (ID) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (VDSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).