IXSG110N65L2K

IXYS
747-IXSG110N65L2K
IXSG110N65L2K

Mfr.:

Description:
SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TOLL

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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More Information
Learn more about IXYS IXSG110N65L2K

In Stock: 2.090

Stock:
2.090 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp194.789,04 Rp194.789,04
Rp148.719,33 Rp1.487.193,30
Rp124.020,36 Rp12.402.036,00
Rp112.634,31 Rp56.317.155,00
Full Reel (Order in multiples of 2000)
Rp93.715,95 Rp187.431.900,00
4.000 Quote
† A MouseReel™ fee of Rp98.000,00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
TOLL-8
N-Channel
1 Channel
650 V
111 A
33 mOhms
- 5 V, + 20 V
4.5 V
125 nC
- 55 C
+ 175 C
600 W
Enhancement
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 11.5 ns
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 23.4 ns
Factory Pack Quantity: 2000
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 35.1 ns
Typical Turn-On Delay Time: 13 ns
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Attributes selected: 0

Datasheet

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [RDS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (ID) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (VDSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).

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