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IXXH100N60B3

Name: IXYS IXXH100N60B3
Brand: IXYS
SKU: 747-IXXH100N60B3
Price: 226845 IDR
Availability: InStock

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Mouser No:

747-IXXH100N60B3

Mfr. No:

IXXH100N60B3

Mfr.:

IXYS

Description:

IGBTs XPT IGBT B3-Class 600V/210Amp

Datasheet:

IXXH100N60B3 Datasheet

ECAD Model:

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In Stock: 270

Stock:: 270 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp226.845	Rp226.845
	Rp137.508	Rp1.375.080
	Rp137.333	Rp16.479.960
	Rp129.451	Rp66.020.010

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247AD
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.8 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	220 A
Pd - Power Dissipation:	830 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	IXXH100N60
Packaging:	Tube
Brand:	IXYS
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Tradename:	XPT
Unit Weight:	6,500 g

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Datasheet

IXXH100N60B3 Datasheet

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Discrete 600V XPT IGBTs

IXYS Discrete 600V XPT Insulated-Gate Bipolar Transistors (IGBTs) are highly rugged, low loss semiconductor devices that are easily configured in parallel. Developed using IXYS' extreme light punch through (XPT) design platform, these new devices feature excellent electrical characteristics which include low typical Vcesat, low typical current fall times, and low typical turn-off energy per pulse values.

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