KTDM2G3C618BGIEAT

SMARTsemi
473-M2G3C618BGIEAT
KTDM2G3C618BGIEAT

Mfr.:

Description:
DRAM DRAM DDR3(L) 2GB 125MX16 1866Mbps 1.35V/1.5V 96-FBGA Industrial

Datasheet:
ECAD Model:
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Learn more about SMARTsemi KTDM2G3C618BGIEAT

In Stock: 124

Stock:
124 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp204.774 Rp204.774
Rp190.235 Rp1.902.350
Rp184.454 Rp4.611.350
Rp179.900 Rp8.995.000
Rp175.520 Rp17.552.000
Rp169.915 Rp33.643.170
Rp165.536 Rp98.328.384
Rp161.332 Rp191.662.416
2.574 Quote

Product Attribute Attribute Value Select Attribute
SMART
Product Category: DRAM
RoHS:  
SDRAM - DDR3L
2 Gbit
16 bit
933 MHz
FBGA-96
128 M x 16
1.283 V
1.575 V
- 40 C
+ 85 C
KTDM
Tray
Brand: SMARTsemi
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 198
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR3 Memory ICs

SMARTsemi DDR3 Memory ICs feature a double data rate architecture to achieve high-speed operation. The ICs achieve high-speed double-data-rate transfer rates of up to 1866Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3(L) DRAM key features, and all control and address inputs are synchronized with a pair of externally supplied differential clocks.

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