KTDM4G3C618BGIEAT

SMARTsemi
473-M4G3C618BGIEAT
KTDM4G3C618BGIEAT

Mfr.:

Description:
DRAM DRAM DDR3(L) 4GB 256MX16 1866Mbps 1.35V/1.5V 96-FBGA Industrial

Datasheet:
ECAD Model:
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Learn more about SMARTsemi KTDM4G3C618BGIEAT

In Stock: 95

Stock:
95 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
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Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp218.963 Rp218.963
Rp203.372 Rp2.033.720
Rp197.066 Rp4.926.650
Rp192.512 Rp9.625.600
Rp187.782 Rp18.778.200
Rp181.476 Rp35.932.248
Rp176.922 Rp105.091.668
Rp172.542 Rp204.979.896
2.574 Quote

Product Attribute Attribute Value Select Attribute
SMART
Product Category: DRAM
RoHS:  
SDRAM - DDR3L
4 Gbit
16 bit
933 MHz
FBGA-96
256 M x 16
1.283 V
1.575 V
- 40 C
+ 85 C
KTDM
Tray
Brand: SMARTsemi
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 198
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR3 Memory ICs

SMARTsemi DDR3 Memory ICs feature a double data rate architecture to achieve high-speed operation. The ICs achieve high-speed double-data-rate transfer rates of up to 1866Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3(L) DRAM key features, and all control and address inputs are synchronized with a pair of externally supplied differential clocks.

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