KTDM4G3C818BGIEAT

SMARTsemi
473-M4G3C818BGIEAT
KTDM4G3C818BGIEAT

Mfr.:

Description:
DRAM DRAM DDR3(L) 4GB 512MX8 1866Mbps 1.35V/1.5V 78-FBGA Industrial

Datasheet:
ECAD Model:
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Learn more about SMARTsemi KTDM4G3C818BGIEAT

In Stock: 210

Stock:
210 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp218.963 Rp218.963
Rp203.372 Rp2.033.720
Rp197.066 Rp4.926.650
Rp192.337 Rp9.616.850
Rp187.782 Rp18.778.200
Rp181.476 Rp38.109.960
Rp176.922 Rp74.307.240
Rp172.542 Rp181.169.100
2.520 Quote

Product Attribute Attribute Value Select Attribute
SMART
Product Category: DRAM
RoHS:  
SDRAM - DDR3L
4 Gbit
8 bit
933 MHz
FBGA-78
512 M x 8
1.283 V
1.575 V
- 40 C
+ 85 C
KTDM
Tray
Brand: SMARTsemi
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 210
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR3 Memory ICs

SMARTsemi DDR3 Memory ICs feature a double data rate architecture to achieve high-speed operation. The ICs achieve high-speed double-data-rate transfer rates of up to 1866Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3(L) DRAM key features, and all control and address inputs are synchronized with a pair of externally supplied differential clocks.

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