MAPC-A3008-AB000

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Mouser No:

937-MAPC-A3008-AB000

Mfr. No:

MAPC-A3008-AB000

Mfr.:

MACOM

Description:

GaN FETs Transistor, DC-6.0GHz, 35W, G28V5

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

MAPC-A3008-AB000 Datasheet (PDF)

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Learn more about MACOM MAPC-A3008-AB000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	440166
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	84 V
Id - Continuous Drain Current:	6 A
Vgs - Gate-Source Voltage:	- 10 V, + 2 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Brand:	MACOM
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Gain:	10.9 dB
Maximum Operating Frequency:	6 GHz
Minimum Operating Frequency:	0 Hz
Output Power:	47.8 dBm
Product:	GaN FETs
Product Type:	GaN FETs
Factory Pack Quantity:	1
Subcategory:	Transistors
Type:	GaN on SiC Amplifier

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Datasheet

MAPC-A3008-AB000 Datasheet (PDF)

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USHTS:: 8541290055
ECCN:: EAR99

GaN on SiC Transistors

MACOM GaN on SiC Transistors are next-generation RF power transistors that deliver industry-leading gain, efficiency, and power in the same compact footprint. These transistors feature 28V operating voltage, up to 8GHz frequency, high efficiency, and high breakdown voltage. The GaN on SiC transistors support high power, gain, and efficiency, while keeping the same footprint, versus previous generations. These transistors are 100% pass-biased JEDEC HAST (JESD22-A110E) and pass-Highly Accelerated Temperature and Humidity Stress Test (HAST). The GaN on SiC transistors are ideal for 2-way private radio, broadband amplifiers, cellular infrastructure, test instrumentation, and general amplification.