MAPC-A3009-AB000

MACOM
937-MAPC-A3009-AB000
MAPC-A3009-AB000

Mfr.:

Description:
GaN FETs Transistor, DC-4.0GHz, 50W, G28V5

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about MACOM MAPC-A3009-AB000
This product may require additional documentation to export from the United States.

Availability

Stock:
0

You can still purchase this product for backorder.

Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp10.817.273,01 Rp10.817.273,01
Rp10.218.541,95 Rp102.185.419,50

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
Delivery Alerts:
 This product may require additional documentation to export from the United States.
RoHS:  
SMD/SMT
440223
1 Channel
84 V
6 A
- 10 V, + 2 V
- 40 C
+ 85 C
Brand: MACOM
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Gain: 14.2 dB
Maximum Operating Frequency: 4 GHz
Minimum Operating Frequency: 0 Hz
Output Power: 48.6 dBm
Product Type: GaN FETs
Factory Pack Quantity: 1
Subcategory: Transistors
Type: GaN on SiC Transistor
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Attributes selected: 0

Datasheet

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CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
3A001.b.3.a.4

GaN on SiC Transistors

MACOM GaN on SiC Transistors are next-generation RF power transistors that deliver industry-leading gain, efficiency, and power in the same compact footprint. These transistors feature 28V operating voltage, up to 8GHz frequency, high efficiency, and high breakdown voltage. The GaN on SiC transistors support high power, gain, and efficiency, while keeping the same footprint, versus previous generations. These transistors are 100% pass-biased JEDEC HAST (JESD22-A110E) and pass-Highly Accelerated Temperature and Humidity Stress Test (HAST). The GaN on SiC transistors are ideal for 2-way private radio, broadband amplifiers, cellular infrastructure, test instrumentation, and general amplification.

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