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MASTERGAN1

Name: STMicroelectronics MASTERGAN1
Brand: STMicroelectronics
SKU: 511-MASTERGAN1
Price: 160105 IDR
Availability: InStock

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Mouser No:

511-MASTERGAN1

Mfr. No:

MASTERGAN1

Mfr.:

STMicroelectronics

Description:

Gate Drivers High power density 600V half-bridge driver with two enhancement mode GaN HEMTs

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Datasheet:

MASTERGAN1 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics MASTERGAN1

In Stock: 494

Stock:: 494 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp160.105	Rp160.105
	Rp112.809	Rp1.128.090
	Rp93.190	Rp9.319.000
	Rp88.986	Rp22.246.500
	Rp82.155	Rp41.077.500
	Rp81.980	Rp204.950.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
RoHS:
Product:	Half-Bridge Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	QFN-31
Number of Drivers:	2 Driver
Number of Outputs:	1 Output
Output Current:	10 A
Supply Voltage - Min:	4.75 V
Supply Voltage - Max:	9.5 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	MASTERGAN
Packaging:	Tray
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Development Kit:	EVALMASTERGAN1
Moisture Sensitive:	Yes
Operating Supply Current:	680 uA
Product Type:	Gate Drivers
Rds On - Drain-Source Resistance:	330 mOhms
Shutdown:	Shutdown
Factory Pack Quantity:	1560
Subcategory:	PMIC - Power Management ICs
Unit Weight:	120 mg

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Datasheet

MASTERGAN1 Datasheet (PDF)

PCN

CNHTS:: 8542399000
USHTS:: 8542390090
ECCN:: EAR99

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an R_DS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.