MASTERGAN1LTR

STMicroelectronics
511-MASTERGAN1LTR
MASTERGAN1LTR

Mfr.:

Description:
Gate Drivers 600 V half-bridge enhancement mode GaN HEMT with high voltage driver
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Datasheet:
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In Stock: 1.274

Stock:
1.274 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 1274 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp125.071 Rp125.071
Rp96.519 Rp965.190
Rp89.512 Rp2.237.800
Rp81.629 Rp8.162.900
Rp77.775 Rp19.443.750
Rp75.498 Rp37.749.000
Rp73.747 Rp73.747.000
Full Reel (Order in multiples of 3000)
Rp66.565 Rp199.695.000

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge
SMD/SMT
QFN-31
4 Output
17 A
4.75 V
9.5 V
Non-Inverting
- 40 C
+ 125 C
MASTERGAN
Reel
Cut Tape
Brand: STMicroelectronics
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TH
Maximum Turn-Off Delay Time: 45 ns
Maximum Turn-On Delay Time: 45 ns
Moisture Sensitive: Yes
Operating Supply Current: 10 A
Pd - Power Dissipation: 40 mW
Product Type: Gate Drivers
Propagation Delay - Max: 70 ns
Rds On - Drain-Source Resistance: 330 mOhms
Shutdown: Shutdown
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: GaN
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Attributes selected: 0

Datasheet

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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.

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