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MJD2873Q-13

Name: Diodes Incorporated MJD2873Q-13
Brand: Diodes Incorporated
SKU: 621-MJD2873Q-13
Price: 12787.41 IDR
Availability: InStock

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Mouser No:

621-MJD2873Q-13

Mfr. No:

MJD2873Q-13

Mfr.:

Diodes Incorporated

Description:

Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K

Datasheet:

MJD2873Q-13 Datasheet (PDF)

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In Stock: 5.604

Stock:: 5.604 Can Dispatch Immediately

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Factory Lead Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-,--

Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp12.787,41	Rp12.787,41
	Rp7.725,00	Rp77.250,00
	Rp5.079,93	Rp507.993,00
	Rp3.871,26	Rp1.935.630,00
	Rp3.415,82	Rp3.415.820,00
Full Reel (Order in multiples of 2500)
	Rp3.118,03	Rp7.795.075,00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	Bipolar Transistors - BJT
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	50 V
Collector- Base Voltage VCBO:	70 V
Emitter- Base Voltage VEBO:	7 V
Collector-Emitter Saturation Voltage:	300 mV
Pd - Power Dissipation:	2.6 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Qualification:	AEC-Q100
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diodes Incorporated
Continuous Collector Current:	2 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
DC Collector/Base Gain hFE Min:	40
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	2500
Subcategory:	Transistors

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Datasheet

MJD2873Q-13 Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

MJD Automotive Medium Power Transistors

Diodes Inc. MJD Automotive Medium Power Transistors are bipolar transistors that are AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. Each device has a collector-emitter breakdown voltage of 50V or 100V (minimum). The Diodes Inc. MJD Automotive Medium Power Transistors come in a TO-252 (DPAK) package and are ideal for power switching or amplification applications.