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MMBT5551W-AU_R1_007A1

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See Product Specifications

Mouser No:

241-MMBT5551WAUR17A1

Mfr. No:

MMBT5551W-AU_R1_007A1

Mfr.:

Panjit

Description:

Bipolar Transistors - BJT NPN HIGH VOLTAGE TRANSISTOR,AEC-Q101 qualified

Datasheet:

MMBT5551W-AU_R1_007A1 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	Bipolar Transistors - BJT
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-323-3
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	160 V
Collector- Base Voltage VCBO:	180 V
Emitter- Base Voltage VEBO:	6 V
Collector-Emitter Saturation Voltage:	200 mV
Pd - Power Dissipation:	200 mW
Gain Bandwidth Product fT:	300 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Panjit
Continuous Collector Current:	600 mA
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
DC Collector/Base Gain hFE Min:	80 V at 10 mA, 5 V
DC Current Gain hFE Max:	250 V at 10 mA, 5 V
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	3000
Subcategory:	Transistors
Unit Weight:	5 mg

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Datasheet

MMBT5551W-AU_R1_007A1 Datasheet (PDF)

USHTS:: 8541210075
TARIC:: 8541210000
ECCN:: EAR99

MMBT5551W NPN Silicon High-Voltage Transistors

PANJIT MMBT5551W NPN Silicon High-Voltage Transistors offer a collector-emitter voltage (V_CE) of 160V and a collector current (I_C) rating of 600mA. The PANJIT MMBT5551W is suitable for a wide range of electronic applications. This transistor is environmentally friendly, lead-free, and complies with EU RoHS 2.0 regulations. Additionally, it features a green molding compound that meets the IEC 61249 standard.