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MR4A08BUYS45

Name: Everspin Technologies MR4A08BUYS45
Brand: Everspin Technologies
SKU: 936-MR4A08BUYS45
Price: 1450408 IDR
Availability: InStock

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Mouser No:

936-MR4A08BUYS45

Mfr. No:

MR4A08BUYS45

Mfr.:

Everspin Technologies

Description:

MRAM 16Mb 3.3V 45ns 2Mx8 Parallel MRAM

Datasheet:

MR4A08BUYS45 Datasheet (PDF)

ECAD Model:

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Learn more about Everspin Technologies MR4A08BUYS45

In Stock: 218

Stock:: 218 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp1.450.408	Rp1.450.408
	Rp1.338.824	Rp13.388.240
	Rp1.295.032	Rp32.375.800
	Rp1.262.450	Rp63.122.500
	Rp1.216.731	Rp121.673.100
270	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Everspin Technologies
Product Category:	MRAM
RoHS:
Package/Case:	TSOP-II-44
Interface Type:	Parallel
Memory Size:	16 Mbit
Organisation:	2 M x 8
Data Bus Width:	8 bit
Access Time:	45 ns
Supply Voltage - Min:	3 V
Supply Voltage - Max:	3.6 V
Operating Supply Current:	60 mA, 152 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	MR4A08B
Packaging:	Tray
Brand:	Everspin Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Pd - Power Dissipation:	600 mW
Product Type:	MRAM
Factory Pack Quantity:	135
Subcategory:	Memory & Data Storage
Tradename:	Parallel I/O (x8)
Unit Weight:	37 g

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Datasheet

MR4A08BUYS45 Datasheet (PDF)

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CNHTS:: 8542329090
CAHTS:: 8542320090
USHTS:: 8542320071
MXHTS:: 8542320201
ECCN:: EAR99

MR4A08B & MR4A16B 16Mb Parallel MRAMs

Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.