MWT-LN600

CML Micro
938-MWT-LN600
MWT-LN600

Mfr.:

Description:
RF MOSFET Transistors Low Noise pHEMT Devices

Datasheet:
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In Stock: 100

Stock:
100 Can Dispatch Immediately
Quantities greater than 100 will be subject to minimum order requirements.
Minimum: 10   Multiples: 10
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp609.767 Rp6.097.670
Rp525.160 Rp131.290.000

Product Attribute Attribute Value Select Attribute
CML Micro
Product Category: RF MOSFET Transistors
RoHS:  
GaAs
175 mA
4.5 V
26 GHz
8 dB, 11 dB
20 dBm
+ 150 C
Die
Bulk
Brand: CML Micro
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Forward Transconductance - Min: 300 mS
Pd - Power Dissipation: 500 mW
Product Type: RF MOSFET Transistors
Series: MWT
Factory Pack Quantity: 10
Subcategory: MOSFETs
Tradename: MWT-LN600
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Attributes selected: 0

Datasheet

Other

USHTS:
8541210040
TARIC:
8541290000
ECCN:
EAR99

GaAs FET & pHEMT Devices

MicroWave Technology GaAs FET and pHEMT Devices are ultra-linear, high-dynamic range, and low-phase noise devices that include commercial, industrial, military, and space-grade variants. The GaAs process employed by MicroWave Technology is approved for space applications with proven reliability. These devices come with standard and custom device specifications with high-rel and space-rel screening options availability. The GaAs FET and pHEMT devices are RoHS (lead-free) compliant and offer 100% wafer bond pull, die shear, wafer DC burn-in, and bake tests in evaluation per MIL-PRF-38534. These devices are typically suitable for oscillators, narrow-band, wideband applications, space, and military applications.

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