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NTB011N15MC

Name: onsemi NTB011N15MC
Brand: onsemi
SKU: 863-NTB011N15MC
Price: 73221 IDR
Availability: InStock

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See Product Specifications

Mouser No:

863-NTB011N15MC

Mfr. No:

NTB011N15MC

Mfr.:

onsemi

Description:

MOSFETs PTNG 150V N-FET D2PAK

Datasheet:

NTB011N15MC Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTB011N15MC

In Stock: 387

Stock:: 387 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp73.221	Rp73.221
	Rp51.150	Rp511.500
	Rp43.793	Rp4.379.300
	Rp42.917	Rp21.458.500
Full Reel (Order in multiples of 800)
	Rp42.041	Rp33.632.800

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	75.4 A
Rds On - Drain-Source Resistance:	10.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	37 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	3.75 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	MOSFETs
Series:	NTB011N15MC
Factory Pack Quantity:	800
Subcategory:	Transistors

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Datasheet

NTB011N15MC Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Shielded Gate PowerTrench® MOSFETs

onsemi Shielded Gate PowerTrench® MOSFETs are N-channel MOSFETs that minimize on-state resistance and maintain superior switching performance with best-in-class soft body diode. These MOSFET offers lower Q_rr compared to other MOSFETs. onsemi Shielded Gate PowerTrench MOSFETs lower switching noise/electromagnetic interference (EMI). These MOSFETs feature low R_DS(on) to minimize conduction losses and low Q_G and capacitance to minimize driver losses. The Shielded Gate PowerTrench MOSFETs come in a small PQFN8 package with 5mm x 6mm dimensions for compact designs. Typical applications include synchronous rectification (SR), AC-DC and DC-DC power supplies, AC-DC adapters (USB Power Delivery) SR, and load switches.