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NTMFS2D3N04XMT1G

Name: onsemi NTMFS2D3N04XMT1G
Brand: onsemi
SKU: 863-NTMFS2D3N04XMT1G
Price: 27677 IDR
Availability: InStock

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Mouser No:

863-NTMFS2D3N04XMT1G

Mfr. No:

NTMFS2D3N04XMT1G

Mfr.:

onsemi

Description:

MOSFETs 40V T10M IN S08FL PACKAGE

Datasheet:

NTMFS2D3N04XMT1G Datasheet

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In Stock: 5.923

Stock:: 5.923 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp27.677	Rp27.677
	Rp17.692	Rp176.920
	Rp11.701	Rp1.170.100
	Rp9.214	Rp4.607.000
	Rp8.548	Rp8.548.000
Full Reel (Order in multiples of 1500)
	Rp8.163	Rp12.244.500

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	111 A
Rds On - Drain-Source Resistance:	2.35 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	22.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	53 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	MY
Country of Diffusion:	JP
Country of Origin:	MY
Fall Time:	4.69 ns
Forward Transconductance - Min:	89.2 S
Product Type:	MOSFETs
Rise Time:	5.19 ns
Series:	NTMFS2D3N04XM
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	22.2 ns
Typical Turn-On Delay Time:	15.8 ns

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Datasheet

NTMFS2D3N04XMT1G Datasheet

PCN

Product Change Notification 2024-02-06 (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

40V Power MOSFETs

onsemi 40V Power MOSFETs feature standard gate-level technology and boast best-in-class on-resistance. The onsemi MOSFETs are designed for motor driver applications. The devices effectively minimize conduction and driving losses with lower on-resistance and reduced gate charge. Additionally, the MOSFETs provide excellent softness control for body diode reverse recovery, effectively mitigating voltage spike stress without needing an extra snubber circuit in applications.