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NTMFS2D5N08XT1G

Name: onsemi NTMFS2D5N08XT1G
Brand: onsemi
SKU: 863-NTMFS2D5N08XT1G
Price: 48172 IDR
Availability: InStock

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Mouser No:

863-NTMFS2D5N08XT1G

Mfr. No:

NTMFS2D5N08XT1G

Mfr.:

onsemi

Description:

MOSFETs T10 80V STD NCH MOSFET SO8FL

Datasheet:

NTMFS2D5N08XT1G Datasheet

ECAD Model:

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In Stock: 5.829

Stock:: 5.829 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp48.172	Rp48.172
	Rp31.180	Rp311.800
	Rp21.546	Rp2.154.600
	Rp17.447	Rp8.723.500
	Rp16.291	Rp16.291.000
Full Reel (Order in multiples of 1500)
	Rp16.291	Rp24.436.500

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	181 A
Rds On - Drain-Source Resistance:	2.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	53 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	148 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	MY
Country of Diffusion:	JP
Country of Origin:	MY
Fall Time:	8 ns
Forward Transconductance - Min:	135 S
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	NTMFS2D5N08X
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	38 ns
Typical Turn-On Delay Time:	26 ns

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Datasheet

NTMFS2D5N08XT1G Datasheet

PCN

Product Change Notification 2025-2-27 (PDF)

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

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