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NTTFD9D0N06HLTWG

Name: onsemi NTTFD9D0N06HLTWG
Brand: onsemi
SKU: 863-NTTFD9D0N06HLTWG
Price: 49223 IDR
Availability: InStock

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Mouser No:

863-NTTFD9D0N06HLTWG

Mfr. No:

NTTFD9D0N06HLTWG

Mfr.:

onsemi

Description:

MOSFETs T8 60V DFN POWER CLIP 3X3 DUAL SYMMETRICAL

Datasheet:

NTTFD9D0N06HLTWG Datasheet

ECAD Model:

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In Stock: 1.617

Stock:: 1.617 Can Dispatch Immediately

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Factory Lead Time:: 43 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp49.223	Rp49.223
	Rp31.881	Rp318.810
	Rp22.071	Rp2.207.100
	Rp18.043	Rp9.021.500
	Rp17.867	Rp17.867.000
Full Reel (Order in multiples of 3000)
	Rp17.027	Rp51.081.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WDFN-12
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	38 A
Rds On - Drain-Source Resistance:	9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	13.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	26 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Product Type:	MOSFETs
Series:	NTTFD9D0N06HL
Factory Pack Quantity:	3000
Subcategory:	Transistors

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Datasheet

NTTFD9D0N06HLTWG Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

NTTFD4D0N04HL & NTTFD9D0N06HL N-Channel MOSFETs

onsemi NTTFD4D0N04HL and NTTFD9D0N06HL N-Channel MOSFETs are POWERTRENCH® power clip symmetric dual-channel MOSFETs in a WQFN12 package. These devices include two specialized N-Channel MOSFETs in a dual package. The switch node is internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q2) and synchronous MOSFET (Q1) are designed to provide optimal power efficiency. onsemi NTTFD4D0N04HL and NTTFD9D0N06HL N-Channel MOSFETs offer low R_DS(on), low Q_G and capacitance, and low conduction/driver losses. Typical applications include DC-DC converters, general-purpose point of load, single-phase motor drives, computing, and communications

Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (R_DS(ON), ultra-low gate charge (Q_g), and low (Q_g) x R_DS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Q_g and Q_oss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).